InP nanowire/polymer hybrid photodiode.

نویسندگان

  • Clint J Novotny
  • Edward T Yu
  • Paul K L Yu
چکیده

A novel design is presented for a nanowire/polymer hybrid photodiode. n-InP nanowires are grown directly onto an indium tin oxide (ITO) electrode to increase carrier collection efficiency and to eliminate the need for an expensive substrate. Experiments show that an ohmic contact is achieved between the nanowires and the ITO electrode. The nanowires are then enveloped by a high hole mobility conjugated polymer, poly(3-hexylthiophene). Compared to the control polymer-only device, the inclusion of InP nanowires increases the forward bias current conduction by 6-7 orders of magnitude. A high rectification ratio of 155 is achieved in these photodiodes along with a low ideality factor of 1.31. The hybrid device produces a photoresponse with a fill factor of 0.44, thus showing promise as an alternative to current polymer solar cell designs.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Near-Unity Unselective Absorption in Sparse InP Nanowire Arrays

We experimentally demonstrate near-unity, unselective absorption, broadband, angle-insensitive, and polarization-independent absorption, in sparse InP nanowire arrays, embedded in flexible polymer sheets via geometric control of waveguide modes in two wire motifs: (i) arrays of tapered wires and (ii) arrays of nanowires with varying radii. Sparse arrays of these structures exhibit enhanced abso...

متن کامل

Serial 100 Gb/s connectivity based on polymer photonics and InP-DHBT electronics.

We demonstrate the first integrated transmitter for serial 100 Gb/s NRZ-OOK modulation in datacom and telecom applications. The transmitter relies on the use of an electro-optic polymer modulator and the hybrid integration of an InP laser diode and InP-DHBT electronics with the polymer board. Evaluation is made at 80 and 100 Gb/s through eye-diagrams and BER measurements using a receiver module...

متن کامل

Improving the optical properties of thin film plasmonic solar cells of InP absorber layer using nanowires

In this paper, a thin-film InP-based solar cell designed and simulated. The proposed InP solar cell has a periodic array of plasmonic back-reflector, which consists of a silver layer and two silver nanowires. The indium tin oxide (ITO) layer also utilized as an anti-reflection coating (ARC) layer on top. The design creates a light-trapping structure by using a plasmonic back-reflector and an an...

متن کامل

Single n+-i-n+ InP nanowires for highly sensitive terahertz detection.

Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to...

متن کامل

Single quantum dot nanowire LEDs.

We report reproducible fabrication of InP-InAsP nanowire light-emitting diodes in which electron-hole recombination is restricted to a quantum-dot-sized InAsP section. The nanowire geometry naturally self-aligns the quantum dot with the n-InP and p-InP ends of the wire, making these devices promising candidates for electrically driven quantum optics experiments. We have investigated the operati...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:
  • Nano letters

دوره 8 3  شماره 

صفحات  -

تاریخ انتشار 2008